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Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

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dc.contributor.authorSerincan, U.
dc.contributor.authorİlker Yıldız
dc.contributor.authorMustafa Kulakcı
dc.contributor.authorU. Serincan
dc.contributor.authorMario Barozzi
dc.contributor.authorM. Bersani
dc.contributor.authorRaşit Turan
dc.contributor.orcid0000-0003-0599-588X
dc.contributor.orcid0000-0001-5761-655X
dc.contributor.orcid0000-0003-3857-5814
dc.contributor.orcid0000-0002-6305-4343
dc.contributor.orcid0000-0002-1308-4261
dc.contributor.orcid0000-0002-2612-8972
dc.date.accessioned2025-11-13T12:12:31Z
dc.date.issued2007-07-15
dc.identifier.doihttps://doi.org/10.1063/1.2756622
dc.identifier.issn0021-8979
dc.identifier.issue2
dc.identifier.openalexW2024960486
dc.identifier.urihttps://hdl.handle.net/11421/9302
dc.identifier.urihttps://doi.org/10.1063/1.2756622
dc.identifier.volume102
dc.language.isoen
dc.relation.ispartofJournal of Applied Physics
dc.rightsopenAccess
dc.subjectX-ray photoelectron spectroscopy
dc.subjectNanocrystal
dc.subjectIon implantation
dc.subjectSapphire
dc.subjectAnnealing (glass)
dc.subjectAnalytical Chemistry (journal)
dc.subjectAmorphous solid
dc.subjectSilicon
dc.subjectMaterials science
dc.subjectBinding energy
dc.subjectSecondary ion mass spectrometry
dc.subjectIon
dc.subjectChemistry
dc.subjectCrystallography
dc.subjectNanotechnology
dc.subjectAtomic physics
dc.subjectChemical engineering
dc.subjectOptoelectronics
dc.subjectMetallurgy
dc.titleDepth profile investigations of silicon nanocrystals formed in sapphire by ion implantation
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5019428469

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