Yayın: Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
| dc.contributor.author | Ardali, S. | |
| dc.contributor.author | Tiraş, E. | |
| dc.contributor.author | P. Narin | |
| dc.contributor.author | E. Kutlu | |
| dc.contributor.author | S.B. Lişesivdin | |
| dc.contributor.author | Т. В. Малин | |
| dc.contributor.author | V. G. Mansurov | |
| dc.contributor.author | К. С. Журавлев | |
| dc.contributor.author | E. Tiraş | |
| dc.contributor.orcid | 0000-0002-8138-6632 | |
| dc.contributor.orcid | 0000-0002-0422-7865 | |
| dc.contributor.orcid | 0000-0003-3956-7277 | |
| dc.contributor.orcid | 0000-0001-9635-6770 | |
| dc.contributor.orcid | 0000-0001-6015-0631 | |
| dc.contributor.orcid | 0000-0003-1921-1847 | |
| dc.contributor.orcid | 0000-0002-3171-5098 | |
| dc.contributor.orcid | 0000-0003-1711-3637 | |
| dc.date.accessioned | 2025-11-13T22:19:29Z | |
| dc.date.issued | 2015-11-11 | |
| dc.identifier.doi | https://doi.org/10.1016/j.jallcom.2015.11.056 | |
| dc.identifier.endpage | 94 | |
| dc.identifier.issn | 0925-8388 | |
| dc.identifier.openalex | W2190093617 | |
| dc.identifier.startpage | 90 | |
| dc.identifier.uri | https://hdl.handle.net/11421/13811 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jallcom.2015.11.056 | |
| dc.identifier.volume | 659 | |
| dc.language.iso | en | |
| dc.relation.ispartof | Journal of Alloys and Compounds | |
| dc.rights | restrictedAccess | |
| dc.subject | Passivation | |
| dc.subject | High-electron-mobility transistor | |
| dc.subject | Materials science | |
| dc.subject | Phonon | |
| dc.subject | Heterojunction | |
| dc.subject | Relaxation (psychology) | |
| dc.subject | Electron | |
| dc.subject | Condensed matter physics | |
| dc.subject | Atmospheric temperature range | |
| dc.subject | Gallium nitride | |
| dc.subject | Power loss | |
| dc.subject | Wide-bandgap semiconductor | |
| dc.subject | Range (aeronautics) | |
| dc.subject | Activation energy | |
| dc.subject | Transistor | |
| dc.subject | Optoelectronics | |
| dc.subject | Power (physics) | |
| dc.subject | Chemistry | |
| dc.subject | Nanotechnology | |
| dc.subject | Physics | |
| dc.subject | Layer (electronics) | |
| dc.subject | Physical chemistry | |
| dc.subject | Voltage | |
| dc.subject | Composite material | |
| dc.subject | Thermodynamics | |
| dc.subject.sdg | 7 | |
| dc.title | Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| local.authorid.openalex | A5008892502 | |
| local.authorid.openalex | A5076533541 |
