Yayın: Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
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Passivation, High-electron-mobility transistor, Materials science, Phonon, Heterojunction, Relaxation (psychology), Electron, Condensed matter physics, Atmospheric temperature range, Gallium nitride, Power loss, Wide-bandgap semiconductor, Range (aeronautics), Activation energy, Transistor, Optoelectronics, Power (physics), Chemistry, Nanotechnology, Physics, Layer (electronics), Physical chemistry, Voltage, Composite material, Thermodynamics