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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

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dc.contributor.authorErgün, Y.
dc.contributor.authorİsmail Altuntaş
dc.contributor.authorBarış Bulut
dc.contributor.authorM. Ezzedini
dc.contributor.authorY. Ergün
dc.contributor.authorS. Elagöz
dc.contributor.orcid0000-0002-2224-989X
dc.contributor.orcid0000-0002-3979-7868
dc.contributor.orcid0000-0003-1755-1063
dc.contributor.orcid0000-0002-3600-8640
dc.date.accessioned2025-11-13T10:43:25Z
dc.date.issued2018-03-27
dc.identifier.doihttps://doi.org/10.1088/1361-6641/aab9d3
dc.identifier.endpage055005
dc.identifier.issn0268-1242
dc.identifier.issue5
dc.identifier.openalexW2794696124
dc.identifier.startpage055005
dc.identifier.urihttps://hdl.handle.net/11421/5060
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aab9d3
dc.identifier.volume33
dc.language.isoen
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectDoping
dc.subjectOptoelectronics
dc.subjectSubstrate (aquarium)
dc.subjectMetalorganic vapour phase epitaxy
dc.subjectDopant
dc.subjectEpitaxy
dc.subjectLaser
dc.subjectLayer (electronics)
dc.subjectElectron mobility
dc.subjectCharacterization (materials science)
dc.subjectCascade
dc.subjectNanotechnology
dc.subjectChemistry
dc.subjectOptics
dc.titleComprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5103253376

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