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The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

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dc.contributor.authorArdali, S.
dc.contributor.authorTiraş, E.
dc.contributor.authorS.B. Lişesivdin
dc.contributor.authorТ. В. Малин
dc.contributor.authorV. G. Mansurov
dc.contributor.authorК. С. Журавлев
dc.contributor.authorE. Tiraş
dc.contributor.orcid0000-0002-0422-7865
dc.contributor.orcid0000-0002-8138-6632
dc.contributor.orcid0000-0001-9635-6770
dc.contributor.orcid0000-0001-6015-0631
dc.contributor.orcid0000-0003-1921-1847
dc.contributor.orcid0000-0002-3171-5098
dc.contributor.orcid0000-0003-1711-3637
dc.date.accessioned2025-11-13T10:36:36Z
dc.date.issued2015-04-28
dc.identifier.doihttps://doi.org/10.1002/pssb.201552135
dc.identifier.endpage1965
dc.identifier.issn0370-1972
dc.identifier.issue9
dc.identifier.openalexW1548719127
dc.identifier.startpage1960
dc.identifier.urihttps://hdl.handle.net/11421/4699
dc.identifier.urihttps://doi.org/10.1002/pssb.201552135
dc.identifier.volume252
dc.language.isoen
dc.relation.ispartofphysica status solidi (b)
dc.rightsrestrictedAccess
dc.subjectPassivation
dc.subjectHeterojunction
dc.subjectMaterials science
dc.subjectMolecular beam epitaxy
dc.subjectDoping
dc.subjectBarrier layer
dc.subjectOptoelectronics
dc.subjectElectron mobility
dc.subjectHall effect
dc.subjectLayer (electronics)
dc.subjectElectron diffraction
dc.subjectAtmospheric temperature range
dc.subjectDiffraction
dc.subjectEpitaxy
dc.subjectCondensed matter physics
dc.subjectNanotechnology
dc.subjectElectrical resistivity and conductivity
dc.subjectOptics
dc.subjectElectrical engineering
dc.titleThe variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5008892502
local.authorid.openalexA5076533541

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