Yayın: The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
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Passivation, Heterojunction, Materials science, Molecular beam epitaxy, Doping, Barrier layer, Optoelectronics, Electron mobility, Hall effect, Layer (electronics), Electron diffraction, Atmospheric temperature range, Diffraction, Epitaxy, Condensed matter physics, Nanotechnology, Electrical resistivity and conductivity, Optics, Electrical engineering