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Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer

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dc.contributor.authorArdali, S.
dc.contributor.authorTiraş, E.
dc.contributor.authorE. Tiraş
dc.contributor.authorТ. В. Малин
dc.contributor.authorV. G. Mansurov
dc.contributor.authorК. С. Журавлев
dc.contributor.authorS.B. Lişesivdin
dc.contributor.orcid0000-0002-8138-6632
dc.contributor.orcid0000-0002-0422-7865
dc.contributor.orcid0000-0003-1711-3637
dc.contributor.orcid0000-0001-6015-0631
dc.contributor.orcid0000-0003-1921-1847
dc.contributor.orcid0000-0002-3171-5098
dc.contributor.orcid0000-0001-9635-6770
dc.date.accessioned2025-11-13T11:32:01Z
dc.date.issued2016-01-19
dc.identifier.doihttps://doi.org/10.1016/j.sse.2016.01.006
dc.identifier.endpage17
dc.identifier.issn0038-1101
dc.identifier.openalexW2262237898
dc.identifier.startpage12
dc.identifier.urihttps://hdl.handle.net/11421/7111
dc.identifier.urihttps://doi.org/10.1016/j.sse.2016.01.006
dc.identifier.volume118
dc.language.isoen
dc.relation.ispartofSolid-State Electronics
dc.rightsrestrictedAccess
dc.subjectPassivation
dc.subjectHeterojunction
dc.subjectMaterials science
dc.subjectDoping
dc.subjectOptoelectronics
dc.subjectLayer (electronics)
dc.subjectIn situ
dc.subjectNanotechnology
dc.subjectChemistry
dc.titleScattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5008892502
local.authorid.openalexA5076533541

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