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Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers

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dc.contributor.authorDelice, S.
dc.contributor.orcid0000-0001-5409-6528
dc.date.accessioned2025-11-13T22:54:19Z
dc.date.issued2017-12-20
dc.identifier.doihttps://doi.org/10.18038/aubtda.332583
dc.identifier.endpage1
dc.identifier.issn1302-3160
dc.identifier.openalexW2770936714
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/11421/15695
dc.identifier.urihttps://doi.org/10.18038/aubtda.332583
dc.language.isoen
dc.relation.ispartofAnadolu University Journal of Science and Technology-A Applied Sciences and Engineering
dc.rightsopenAccess
dc.subjectThermoluminescence
dc.subjectMaterials science
dc.subjectDoping
dc.subjectTrapping
dc.subjectAnalytical Chemistry (journal)
dc.subjectLuminescence
dc.subjectActivation energy
dc.subjectFrequency factor
dc.subjectAtomic physics
dc.subjectChemistry
dc.subjectPhysical chemistry
dc.subjectOptoelectronics
dc.subjectPhysics
dc.titleEffect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5053667015

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