Yayın:
Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers

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2017-12-20

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Thermoluminescence, Materials science, Doping, Trapping, Analytical Chemistry (journal), Luminescence, Activation energy, Frequency factor, Atomic physics, Chemistry, Physical chemistry, Optoelectronics, Physics

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https://hdl.handle.net/11421/15695
 https://doi.org/10.18038/aubtda.332583

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