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AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices

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dc.contributor.authorErgün, Y.
dc.contributor.authorY. Ergün
dc.contributor.authorM. Hoştut
dc.contributor.orcid0000-0003-1755-1063
dc.contributor.orcid0000-0002-9312-6483
dc.date.accessioned2025-11-13T22:20:14Z
dc.date.issued2015-01-01
dc.identifier.doihttps://doi.org/10.1515/oere-2015-0001
dc.identifier.issn1230-3402
dc.identifier.issue1
dc.identifier.openalexW2324705073
dc.identifier.urihttps://hdl.handle.net/11421/13852
dc.identifier.urihttps://doi.org/10.1515/oere-2015-0001
dc.identifier.volume23
dc.language.isoen
dc.relation.ispartofOpto-Electronics Review
dc.rightsopenAccess
dc.subjectSuperlattice
dc.subjectMaterials science
dc.subjectBand gap
dc.subjectLayer (electronics)
dc.subjectOptoelectronics
dc.subjectAuger effect
dc.subjectCondensed matter physics
dc.subjectGallium antimonide
dc.subjectMolecular beam epitaxy
dc.subjectAuger
dc.subjectEpitaxy
dc.subjectNanotechnology
dc.subjectAtomic physics
dc.subjectPhysics
dc.subject.sdg7
dc.titleAlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5103253376

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