Yayın: AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices
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Superlattice, Materials science, Band gap, Layer (electronics), Optoelectronics, Auger effect, Condensed matter physics, Gallium antimonide, Molecular beam epitaxy, Auger, Epitaxy, Nanotechnology, Atomic physics, Physics