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Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors

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dc.contributor.authorAkel, Kazım
dc.contributor.authorHoştut, M.
dc.contributor.authorTansel, T.
dc.contributor.authorErgün, Y.
dc.contributor.orcid0000-0001-8323-0343
dc.contributor.orcid0000-0002-9312-6483
dc.contributor.orcid0000-0003-1755-1063
dc.date.accessioned2025-11-13T11:24:47Z
dc.date.issued2018-01-09
dc.identifier.doihttps://doi.org/10.1063/1.4999632
dc.identifier.issn0021-8979
dc.identifier.issue2
dc.identifier.openalexW2784304205
dc.identifier.urihttps://hdl.handle.net/11421/6708
dc.identifier.urihttps://doi.org/10.1063/1.4999632
dc.identifier.volume123
dc.language.isoen
dc.relation.ispartofJournal of Applied Physics
dc.rightsrestrictedAccess
dc.subjectSuperlattice
dc.subjectBand gap
dc.subjectMaterials science
dc.subjectGallium antimonide
dc.subjectOptoelectronics
dc.subjectPhotodetector
dc.subjectElectronic band structure
dc.subjectIndium arsenide
dc.subjectPseudopotential
dc.subjectWavelength
dc.subjectFine structure
dc.subjectMolecular beam epitaxy
dc.subjectGallium arsenide
dc.subjectCondensed matter physics
dc.subjectLayer (electronics)
dc.subjectEpitaxy
dc.subjectPhysics
dc.subjectNanotechnology
dc.subjectQuantum dot
dc.subject.sdg7
dc.titleLarge hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5044156518
local.authorid.openalexA5023030258
local.authorid.openalexA5112879223
local.authorid.openalexA5103253376

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