Yayın: Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
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Superlattice, Band gap, Materials science, Gallium antimonide, Optoelectronics, Photodetector, Electronic band structure, Indium arsenide, Pseudopotential, Wavelength, Fine structure, Molecular beam epitaxy, Gallium arsenide, Condensed matter physics, Layer (electronics), Epitaxy, Physics, Nanotechnology, Quantum dot