AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices - M. Alyoruk; Ergün, Y.; Y. Ergün; M. Hoştut (My University, 2015)
Keywords: Superlattice; Materials science; Band gap; Layer (electronics); Optoelectronics; Auger effect; Condensed matter physics; Gallium antimonide; Molecular beam epitaxy; Auger; Epitaxy; Nanotechnology; Atomic physics; Physics; 7