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Effect of bias voltage on tunneling mechanism in Co40Fe40B20/MgO/Co40Fe40B20 pseudo-spin valve

dc.contributor.authorYıldırım, Mustafa
dc.contributor.authorÖksüzoğlu, Ramis Mustafa
dc.contributor.orcid0000-0002-8149-6022
dc.contributor.orcid0000-0002-0574-5170
dc.date.accessioned2025-11-13T11:52:56Z
dc.date.issued2014-12-17
dc.identifier.doihttps://doi.org/10.1016/j.jmmm.2014.12.038
dc.identifier.endpage287
dc.identifier.issn0304-8853
dc.identifier.openalexW2000034033
dc.identifier.startpage280
dc.identifier.urihttps://hdl.handle.net/11421/8257
dc.identifier.urihttps://doi.org/10.1016/j.jmmm.2014.12.038
dc.identifier.volume379
dc.language.isoen
dc.relation.ispartofJournal of Magnetism and Magnetic Materials
dc.rightsrestrictedAccess
dc.subjectQuantum tunnelling
dc.subjectCondensed matter physics
dc.subjectMaterials science
dc.subjectMagnetoresistance
dc.subjectBiasing
dc.subjectSputter deposition
dc.subjectSpin valve
dc.subjectTunnel magnetoresistance
dc.subjectGiant magnetoresistance
dc.subjectVoltage
dc.subjectTunnel junction
dc.subjectSpin (aerodynamics)
dc.subjectSputtering
dc.subjectThin film
dc.subjectMagnetic field
dc.subjectFerromagnetism
dc.subjectNanotechnology
dc.subjectPhysics
dc.titleEffect of bias voltage on tunneling mechanism in Co40Fe40B20/MgO/Co40Fe40B20 pseudo-spin valve
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5083570750
local.authorid.openalexA5017619626

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