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I–V characterization of a quantum well infrared photodetector with stepped and graded barriers

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dc.contributor.authorErgün, Y.
dc.contributor.authorAyşe Erol
dc.contributor.authorM. Güneş
dc.contributor.authorL.B. Buklu
dc.contributor.authorY. Ergün
dc.contributor.authorM. Ç. Arikan
dc.contributor.orcid0000-0002-2052-4894
dc.contributor.orcid0000-0003-4196-1791
dc.contributor.orcid0000-0002-7974-0540
dc.contributor.orcid0000-0001-6816-1108
dc.date.accessioned2025-11-13T11:28:18Z
dc.date.issued2012-06-23
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2012.06.010
dc.identifier.endpage593
dc.identifier.issn0749-6036
dc.identifier.issue3
dc.identifier.openalexW1975891524
dc.identifier.startpage585
dc.identifier.urihttps://hdl.handle.net/11421/6902
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2012.06.010
dc.identifier.volume52
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsrestrictedAccess
dc.subjectGround state
dc.subjectElectron
dc.subjectMaterials science
dc.subjectInfrared
dc.subjectBiasing
dc.subjectPhotodetector
dc.subjectAtomic physics
dc.subjectQuantum
dc.subjectActivation energy
dc.subjectCharacterization (materials science)
dc.subjectDark current
dc.subjectCondensed matter physics
dc.subjectQuantum well
dc.subjectPhysics
dc.subjectVoltage
dc.subjectOptoelectronics
dc.subjectChemistry
dc.subjectOptics
dc.subjectNanotechnology
dc.subjectQuantum mechanics
dc.subject.sdg7
dc.titleI–V characterization of a quantum well infrared photodetector with stepped and graded barriers
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5086818203

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