Yayın:
Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor

Sadeleştirilmiş öğe sayfası
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorMüjdat Çağlar
dc.contributor.orcid0000-0002-4964-2202
dc.contributor.orcid0000-0001-9724-7664
dc.date.accessioned2025-11-13T10:13:27Z
dc.date.issued2017-08-09
dc.identifier.doihttps://doi.org/10.1016/j.synthmet.2017.07.016
dc.identifier.endpage51
dc.identifier.issn0379-6779
dc.identifier.openalexW2742888802
dc.identifier.startpage46
dc.identifier.urihttps://hdl.handle.net/11421/3499
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2017.07.016
dc.identifier.volume232
dc.language.isoen
dc.relation.ispartofSynthetic Metals
dc.rightsrestrictedAccess
dc.subjectPentacene
dc.subjectMaterials science
dc.subjectOrganic field-effect transistor
dc.subjectGate dielectric
dc.subjectBilayer
dc.subjectDielectric
dc.subjectOptoelectronics
dc.subjectGate oxide
dc.subjectPolystyrene
dc.subjectTransistor
dc.subjectField-effect transistor
dc.subjectThin-film transistor
dc.subjectPolymer
dc.subjectVoltage
dc.subjectNanotechnology
dc.subjectComposite material
dc.subjectMembrane
dc.subjectChemistry
dc.subjectElectrical engineering
dc.subjectLayer (electronics)
dc.subject.sdg7
dc.titleUse of bilayer gate insulator to increase the electrical performance of pentacene based transistor
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5077974474

Dosyalar

Koleksiyonlar

Publications