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Semiconductor shallow impurity level transitions for terahertz generation and detection

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dc.contributor.authorAslan, B.
dc.contributor.authorKorkmaz, Güven
dc.contributor.authorGüven Korkmaz
dc.contributor.orcid0009-0009-7125-7202
dc.contributor.orcid0000-0002-7436-7759
dc.date.accessioned2025-11-13T22:42:04Z
dc.date.issued2014-01-01
dc.identifier.doi10.1364/isuptw.2014.ms2_3
dc.identifier.openalexW1999372242
dc.identifier.urihttps://hdl.handle.net/11421/15024
dc.identifier.urihttps://doi.org/10.1364/isuptw.2014.ms2_3
dc.language.isoen
dc.rightsrestrictedAccess
dc.subjectTerahertz radiation
dc.subjectQuantum well
dc.subjectImpurity
dc.subjectExcited state
dc.subjectSemiconductor
dc.subjectShallow donor
dc.subjectOptoelectronics
dc.subjectQuantum dot
dc.subjectPhysics
dc.subjectCondensed matter physics
dc.subjectAtomic physics
dc.subjectMaterials science
dc.subjectDoping
dc.subjectOptics
dc.subjectQuantum mechanics
dc.titleSemiconductor shallow impurity level transitions for terahertz generation and detection
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5040309765
local.authorid.openalexA5077095302

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