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Thermally activated flux mechanism in Mg-doped InN epitaxial film

dc.contributor.authorTiraş, E.
dc.contributor.authorMustafa Akyol
dc.contributor.authorAhmet Ekicibil
dc.contributor.authorE. Tiraş
dc.contributor.orcid0000-0002-7974-0540
dc.contributor.orcid0000-0001-8584-0620
dc.contributor.orcid0000-0003-3071-0444
dc.contributor.orcid0000-0003-1711-3637
dc.date.accessioned2025-11-13T22:52:37Z
dc.date.issued2017-06-26
dc.identifier.doihttps://doi.org/10.1080/14786435.2017.1343960
dc.identifier.endpage2574
dc.identifier.issn1478-6433
dc.identifier.issue28
dc.identifier.openalexW2691240808
dc.identifier.startpage2564
dc.identifier.urihttps://hdl.handle.net/11421/15599
dc.identifier.urihttps://doi.org/10.1080/14786435.2017.1343960
dc.identifier.volume97
dc.language.isoen
dc.relation.ispartofThe Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
dc.rightsrestrictedAccess
dc.subjectCondensed matter physics
dc.subjectMagnetoresistance
dc.subjectSuperconductivity
dc.subjectMaterials science
dc.subjectCritical field
dc.subjectFlux pinning
dc.subjectDoping
dc.subjectEpitaxy
dc.subjectHall effect
dc.subjectMolecular beam epitaxy
dc.subjectCoherence length
dc.subjectTransition temperature
dc.subjectMagnetic field
dc.subjectHigh-temperature superconductivity
dc.subjectNanotechnology
dc.subjectPhysics
dc.titleThermally activated flux mechanism in Mg-doped InN epitaxial film
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5076533541

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