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ZnO/p-Si heterojunction photodiode by sol–gel deposition of nanostructure n-ZnO film on p-Si substrate

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dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorIlıcan, Saliha
dc.contributor.authorSaliha Ilıcan
dc.contributor.orcid0000-0002-6500-7583
dc.contributor.orcid0000-0001-8462-0925
dc.contributor.orcid0000-0001-9724-7664
dc.date.accessioned2025-11-13T09:02:42Z
dc.date.issued2010-07-21
dc.identifier.doihttps://doi.org/10.1016/j.mssp.2010.05.005
dc.identifier.endpage140
dc.identifier.issn1369-8001
dc.identifier.issue3
dc.identifier.openalexW2088078634
dc.identifier.startpage137
dc.identifier.urihttps://hdl.handle.net/11421/297
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2010.05.005
dc.identifier.volume13
dc.language.isoen
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectNanostructure
dc.subjectHeterojunction
dc.subjectDiode
dc.subjectOptoelectronics
dc.subjectPhotodiode
dc.subjectSubstrate (aquarium)
dc.subjectOpen-circuit voltage
dc.subjectSilicon
dc.subjectNanotechnology
dc.subjectVoltage
dc.subject.sdg7
dc.titleZnO/p-Si heterojunction photodiode by sol–gel deposition of nanostructure n-ZnO film on p-Si substrate
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5030901812
local.authorid.openalexA5077974474
local.authorid.openalexA5060958239

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