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Gate induced monolayer behavior in twisted bilayer black phosphorus

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dc.contributor.authorSevik, Cem
dc.contributor.authorJohn R. Wallbank
dc.contributor.authorOğuz Gülseren
dc.contributor.authorF. M. Peeters
dc.contributor.authorDeniz Çakır
dc.contributor.orcid0000-0002-2412-9672
dc.contributor.orcid0000-0002-6313-0836
dc.contributor.orcid0000-0002-7632-0954
dc.contributor.orcid0000-0003-3507-8951
dc.contributor.orcid0000-0003-3315-5204
dc.date.accessioned2025-11-13T10:09:56Z
dc.date.issued2017-08-03
dc.identifier.doihttps://doi.org/10.1088/2053-1583/aa80c4
dc.identifier.endpage035025
dc.identifier.issn2053-1583
dc.identifier.issue3
dc.identifier.openalexW2742821916
dc.identifier.startpage035025
dc.identifier.urihttps://hdl.handle.net/11421/3323
dc.identifier.urihttps://doi.org/10.1088/2053-1583/aa80c4
dc.identifier.volume4
dc.language.isoen
dc.relation.ispartof2D Materials
dc.rightsopenAccess
dc.subjectMonolayer
dc.subjectBilayer
dc.subjectBlack phosphorus
dc.subjectElectric field
dc.subjectCondensed matter physics
dc.subjectIsotropy
dc.subjectEffective mass (spring–mass system)
dc.subjectAnisotropy
dc.subjectDensity functional theory
dc.subjectMaterials science
dc.subjectDipole
dc.subjectBand gap
dc.subjectChemistry
dc.subjectPhysics
dc.subjectComputational chemistry
dc.subjectNanotechnology
dc.subjectOptoelectronics
dc.subjectOptics
dc.subjectClassical mechanics
dc.subjectQuantum mechanics
dc.subject.sdg16
dc.titleGate induced monolayer behavior in twisted bilayer black phosphorus
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5005966345

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