Yayın: Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
| dc.contributor.author | Serincan, U. | |
| dc.contributor.author | Aslan, B. | |
| dc.contributor.author | Ergün, Y. | |
| dc.contributor.author | Arıkan, Bülent | |
| dc.contributor.author | B. Aslan | |
| dc.contributor.author | Bülent Arıkan | |
| dc.contributor.author | M. Kilinc | |
| dc.contributor.author | Y. Ergün | |
| dc.contributor.author | U. Serincan | |
| dc.contributor.author | Raşit Turan | |
| dc.contributor.orcid | 0000-0001-8144-3951 | |
| dc.contributor.orcid | 0000-0002-5093-9804 | |
| dc.contributor.orcid | 0000-0002-0072-6245 | |
| dc.contributor.orcid | 0000-0001-5952-5993 | |
| dc.contributor.orcid | 0009-0009-7125-7202 | |
| dc.contributor.orcid | 0000-0002-3336-0841 | |
| dc.contributor.orcid | 0000-0002-0100-7197 | |
| dc.contributor.orcid | 0000-0001-6816-1108 | |
| dc.contributor.orcid | 0000-0002-6305-4343 | |
| dc.contributor.orcid | 0000-0002-2612-8972 | |
| dc.date.accessioned | 2025-11-13T10:00:44Z | |
| dc.date.issued | 2012-02-22 | |
| dc.identifier.doi | https://doi.org/10.1109/lpt.2012.2188504 | |
| dc.identifier.endpage | 792 | |
| dc.identifier.issn | 1041-1135 | |
| dc.identifier.issue | 9 | |
| dc.identifier.openalex | W2023538227 | |
| dc.identifier.startpage | 790 | |
| dc.identifier.uri | https://hdl.handle.net/11421/2892 | |
| dc.identifier.uri | https://doi.org/10.1109/lpt.2012.2188504 | |
| dc.identifier.volume | 24 | |
| dc.language.iso | en | |
| dc.relation.ispartof | IEEE Photonics Technology Letters | |
| dc.rights | openAccess | |
| dc.subject | Photodiode | |
| dc.subject | Passivation | |
| dc.subject | Superlattice | |
| dc.subject | Noise (video) | |
| dc.subject | Optoelectronics | |
| dc.subject | Responsivity | |
| dc.subject | Dark current | |
| dc.subject | Gallium arsenide | |
| dc.subject | Materials science | |
| dc.subject | Photodetector | |
| dc.subject | Analytical Chemistry (journal) | |
| dc.subject | Layer (electronics) | |
| dc.subject | Chemistry | |
| dc.subject | Nanotechnology | |
| dc.subject | Computer science | |
| dc.title | Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| local.authorid.openalex | A5019428469 | |
| local.authorid.openalex | A5040309765 | |
| local.authorid.openalex | A5086818203 | |
| local.authorid.openalex | A5110542078 |
