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Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes

dc.contributor.authorSerincan, U.
dc.contributor.authorAslan, B.
dc.contributor.authorErgün, Y.
dc.contributor.authorArıkan, Bülent
dc.contributor.authorB. Aslan
dc.contributor.authorBülent Arıkan
dc.contributor.authorM. Kilinc
dc.contributor.authorY. Ergün
dc.contributor.authorU. Serincan
dc.contributor.authorRaşit Turan
dc.contributor.orcid0000-0001-8144-3951
dc.contributor.orcid0000-0002-5093-9804
dc.contributor.orcid0000-0002-0072-6245
dc.contributor.orcid0000-0001-5952-5993
dc.contributor.orcid0009-0009-7125-7202
dc.contributor.orcid0000-0002-3336-0841
dc.contributor.orcid0000-0002-0100-7197
dc.contributor.orcid0000-0001-6816-1108
dc.contributor.orcid0000-0002-6305-4343
dc.contributor.orcid0000-0002-2612-8972
dc.date.accessioned2025-11-13T10:00:44Z
dc.date.issued2012-02-22
dc.identifier.doihttps://doi.org/10.1109/lpt.2012.2188504
dc.identifier.endpage792
dc.identifier.issn1041-1135
dc.identifier.issue9
dc.identifier.openalexW2023538227
dc.identifier.startpage790
dc.identifier.urihttps://hdl.handle.net/11421/2892
dc.identifier.urihttps://doi.org/10.1109/lpt.2012.2188504
dc.identifier.volume24
dc.language.isoen
dc.relation.ispartofIEEE Photonics Technology Letters
dc.rightsopenAccess
dc.subjectPhotodiode
dc.subjectPassivation
dc.subjectSuperlattice
dc.subjectNoise (video)
dc.subjectOptoelectronics
dc.subjectResponsivity
dc.subjectDark current
dc.subjectGallium arsenide
dc.subjectMaterials science
dc.subjectPhotodetector
dc.subjectAnalytical Chemistry (journal)
dc.subjectLayer (electronics)
dc.subjectChemistry
dc.subjectNanotechnology
dc.subjectComputer science
dc.titleEffect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5019428469
local.authorid.openalexA5040309765
local.authorid.openalexA5086818203
local.authorid.openalexA5110542078

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