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Effect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process

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dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorIlıcan, Saliha
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorAksoy, Seval
dc.contributor.authorF. Yakuphanoğlu
dc.contributor.orcid0000-0001-8462-0925
dc.contributor.orcid0000-0001-9724-7664
dc.contributor.orcid0000-0002-6500-7583
dc.date.accessioned2025-11-13T09:09:55Z
dc.date.issued2014-10-04
dc.identifier.doihttps://doi.org/10.1016/j.jallcom.2014.09.190
dc.identifier.endpage193
dc.identifier.issn0925-8388
dc.identifier.openalexW2025194448
dc.identifier.startpage189
dc.identifier.urihttps://hdl.handle.net/11421/644
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2014.09.190
dc.identifier.volume621
dc.language.isoen
dc.relation.ispartofJournal of Alloys and Compounds
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectThin-film transistor
dc.subjectLayer (electronics)
dc.subjectOptoelectronics
dc.subjectSubstrate (aquarium)
dc.subjectField effect
dc.subjectChannel (broadcasting)
dc.subjectActive layer
dc.subjectCoating
dc.subjectComposite material
dc.subjectElectrical engineering
dc.titleEffect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5030901812
local.authorid.openalexA5060958239
local.authorid.openalexA5077974474
local.authorid.openalexA5111492712

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