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Power Loss Mechanisms in Indium-Rich InGaN Samples

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dc.contributor.authorTiraş, E.
dc.contributor.authorSelman Mutlu
dc.contributor.authorN. Balkan
dc.contributor.orcid0000-0003-1711-3637
dc.contributor.orcid0000-0002-4443-3524
dc.date.accessioned2025-11-13T22:28:15Z
dc.date.issued2015-12-09
dc.identifier.doihttps://doi.org/10.1007/s11664-015-4250-2
dc.identifier.endpage871
dc.identifier.issn0361-5235
dc.identifier.issue2
dc.identifier.openalexW2189678862
dc.identifier.startpage867
dc.identifier.urihttps://hdl.handle.net/11421/14280
dc.identifier.urihttps://doi.org/10.1007/s11664-015-4250-2
dc.identifier.volume45
dc.language.isoen
dc.relation.ispartofJournal of Electronic Materials
dc.rightsrestrictedAccess
dc.subjectElectric field
dc.subjectElectron
dc.subjectIndium
dc.subjectElectron mobility
dc.subjectDrift velocity
dc.subjectMaterials science
dc.subjectRelaxation (psychology)
dc.subjectElectron beam-induced current
dc.subjectCondensed matter physics
dc.subjectAtomic physics
dc.subjectChemistry
dc.subjectAnalytical Chemistry (journal)
dc.subjectPhysics
dc.subjectOptoelectronics
dc.subjectSilicon
dc.titlePower Loss Mechanisms in Indium-Rich InGaN Samples
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5076533541

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