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Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate

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dc.contributor.authorSerincan, U.
dc.contributor.authorArıkan, Bülent
dc.contributor.authorŞenel, Onur
dc.contributor.orcid0000-0002-6305-4343
dc.contributor.orcid0000-0002-3336-0841
dc.date.accessioned2025-11-13T11:29:57Z
dc.date.issued2018-05-13
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2018.05.020
dc.identifier.endpage21
dc.identifier.issn0749-6036
dc.identifier.openalexW2803441765
dc.identifier.startpage15
dc.identifier.urihttps://hdl.handle.net/11421/6995
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2018.05.020
dc.identifier.volume120
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsopenAccess
dc.subjectPhotodetector
dc.subjectSuperlattice
dc.subjectMaterials science
dc.subjectSubstrate (aquarium)
dc.subjectMolecular beam epitaxy
dc.subjectOptoelectronics
dc.subjectCutoff frequency
dc.subjectEpitaxy
dc.subjectQuantum efficiency
dc.subjectDiffraction
dc.subjectWavelength
dc.subjectOptics
dc.subjectNanotechnology
dc.subjectPhysics
dc.subjectLayer (electronics)
dc.subjectBiology
dc.titleDirect growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5019428469
local.authorid.openalexA5110542078
local.authorid.openalexA5106236867

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