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Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range

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dc.contributor.authorErgün, Y.
dc.contributor.authorM. Hoştut
dc.contributor.authorY. Ergün
dc.contributor.orcid0000-0001-8144-3951
dc.contributor.orcid0000-0002-9312-6483
dc.contributor.orcid0000-0003-1755-1063
dc.date.accessioned2025-11-13T10:58:44Z
dc.date.issued2017-08-11
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2017.08.022
dc.identifier.endpage1216
dc.identifier.issn0749-6036
dc.identifier.openalexW2745172771
dc.identifier.startpage1211
dc.identifier.urihttps://hdl.handle.net/11421/5846
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2017.08.022
dc.identifier.volume111
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsrestrictedAccess
dc.subjectPhotodetector
dc.subjectInfrared
dc.subjectMaterials science
dc.subjectOptoelectronics
dc.subjectWavelength
dc.subjectRange (aeronautics)
dc.subjectCarrier lifetime
dc.subjectOptics
dc.subjectPhysics
dc.subjectSilicon
dc.subject.sdg7
dc.titleElectrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5103253376

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