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Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

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dc.contributor.authorTiraş, E.
dc.contributor.authorArdali, S.
dc.contributor.authorMutlu, Selman
dc.contributor.authorÇelik, Ö.
dc.contributor.authorS.B. Lişesivdin
dc.contributor.authorEkmel Özbay
dc.contributor.orcid0000-0003-1711-3637
dc.contributor.orcid0000-0001-5149-8716
dc.contributor.orcid0000-0002-4443-3524
dc.contributor.orcid0000-0002-0422-7865
dc.contributor.orcid0000-0001-9635-6770
dc.contributor.orcid0000-0003-2953-1828
dc.date.accessioned2025-11-13T10:37:54Z
dc.date.issued2012-04-04
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2012.03.029
dc.identifier.endpage744
dc.identifier.issn0749-6036
dc.identifier.issue6
dc.identifier.openalexW2044616817
dc.identifier.startpage733
dc.identifier.urihttps://hdl.handle.net/11421/4772
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2012.03.029
dc.identifier.volume51
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsrestrictedAccess
dc.subjectCondensed matter physics
dc.subjectHeterojunction
dc.subjectElectron
dc.subjectMaterials science
dc.subjectRelaxation (psychology)
dc.subjectPhonon
dc.subjectAtmospheric temperature range
dc.subjectSemiconductor
dc.subjectElectron mobility
dc.subjectElectron temperature
dc.subjectElectric field
dc.subjectAtomic physics
dc.subjectOptoelectronics
dc.subjectPhysics
dc.subject.sdg7
dc.titleTemperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5076533541
local.authorid.openalexA5008892502
local.authorid.openalexA5055792350
local.authorid.openalexA5101989789

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