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Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode

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dc.contributor.authorAksoy, Seval
dc.contributor.authorÇağlar, Yasemin
dc.contributor.orcid0000-0001-8462-0925
dc.date.accessioned2025-11-13T09:26:40Z
dc.date.issued2012-03-06
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2012.02.018
dc.identifier.endpage625
dc.identifier.issn0749-6036
dc.identifier.issue5
dc.identifier.openalexW2041948095
dc.identifier.startpage613
dc.identifier.urihttps://hdl.handle.net/11421/1159
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2012.02.018
dc.identifier.volume51
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectHeterojunction
dc.subjectNanostructure
dc.subjectCrystallite
dc.subjectDiode
dc.subjectOptoelectronics
dc.subjectSemiconductor
dc.subjectScanning electron microscope
dc.subjectOpen-circuit voltage
dc.subjectDiffraction
dc.subjectNanotechnology
dc.subjectVoltage
dc.subjectOptics
dc.subjectComposite material
dc.subject.sdg7
dc.titleEffect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5111492712
local.authorid.openalexA5030901812

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