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UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED DETECTOR PHOTODETECTOR GROWN ON GaAs SUBSTRATE

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dc.contributor.authorSerincan, U.
dc.contributor.authorErkuş, Mehmet
dc.contributor.authorŞenel, Onur
dc.contributor.orcid0000-0002-6305-4343
dc.contributor.orcid0000-0001-6205-8628
dc.date.accessioned2025-11-13T22:52:55Z
dc.date.issued2017-07-18
dc.identifier.doihttps://doi.org/10.18038/aubtda.318136
dc.identifier.endpage1
dc.identifier.issn1302-3160
dc.identifier.openalexW2737905098
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/11421/15616
dc.identifier.urihttps://doi.org/10.18038/aubtda.318136
dc.language.isoen
dc.relation.ispartofAnadolu University Journal of Science and Technology-A Applied Sciences and Engineering
dc.rightsopenAccess
dc.subjectPhotodetector
dc.subjectResponsivity
dc.subjectMaterials science
dc.subjectMolecular beam epitaxy
dc.subjectOptoelectronics
dc.subjectPhotodiode
dc.subjectSubstrate (aquarium)
dc.subjectOptics
dc.subjectInfrared
dc.subjectWavelength
dc.subjectDislocation
dc.subjectEpitaxy
dc.subjectPhysics
dc.subjectNanotechnology
dc.subject.sdg7
dc.titleUNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED DETECTOR PHOTODETECTOR GROWN ON GaAs SUBSTRATE
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5019428469
local.authorid.openalexA5056430509
local.authorid.openalexA5106236867

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