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The variation of electronic properties with the doping concentration of modulation-doped AlxGa1−xAs–GaAs double quantum wells

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dc.contributor.authorErgün, Y.
dc.contributor.authorE. Oztürk
dc.contributor.authorY. Ergün
dc.contributor.authorİsmail Sökmen
dc.contributor.orcid0000-0003-3533-4150
dc.contributor.orcid0000-0003-2508-0863
dc.contributor.orcid0000-0001-6816-1108
dc.date.accessioned2025-11-13T11:19:50Z
dc.date.issued2006-10-20
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2006.09.006
dc.identifier.endpage28
dc.identifier.issn0749-6036
dc.identifier.issue1
dc.identifier.openalexW2028716675
dc.identifier.startpage22
dc.identifier.urihttps://hdl.handle.net/11421/6446
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2006.09.006
dc.identifier.volume41
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsrestrictedAccess
dc.subjectDoping
dc.subjectBand bending
dc.subjectMaterials science
dc.subjectQuantum well
dc.subjectElectronic band structure
dc.subjectCondensed matter physics
dc.subjectElectronic structure
dc.subjectOptoelectronics
dc.subjectPhysics
dc.subjectOptics
dc.titleThe variation of electronic properties with the doping concentration of modulation-doped AlxGa1−xAs–GaAs double quantum wells
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5086818203

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