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Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions

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dc.contributor.authorIlıcan, Saliha
dc.contributor.authorBÜYÜK, Gonca İLGÜ
dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorÇağlar, Müjdat
dc.contributor.orcid0000-0003-2493-0133
dc.contributor.orcid0000-0001-8462-0925
dc.contributor.orcid0000-0001-9724-7664
dc.date.accessioned2025-11-13T22:34:40Z
dc.date.issued2017-10-27
dc.identifier.doihttps://doi.org/10.33107/ubt-ic.2017.146
dc.identifier.openalexW2914929054
dc.identifier.urihttps://hdl.handle.net/11421/14618
dc.identifier.urihttps://doi.org/10.33107/ubt-ic.2017.146
dc.language.isoen
dc.relation.ispartof2017 UBT International Conference
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectHeterojunction
dc.subjectDiffractometer
dc.subjectOptoelectronics
dc.subjectDoping
dc.subjectSpin coating
dc.subjectDiode
dc.subjectNanostructure
dc.subjectBand gap
dc.subjectField electron emission
dc.subjectThin film
dc.subjectScanning electron microscope
dc.subjectNanotechnology
dc.subjectElectron
dc.subjectComposite material
dc.titlePreparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5060958239
local.authorid.openalexA5029725973
local.authorid.openalexA5030901812
local.authorid.openalexA5077974474

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