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Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate

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dc.contributor.authorErkuş, Mehmet
dc.contributor.authorŞenel, Oytun Okan
dc.contributor.authorSerincan, U.
dc.contributor.orcid0000-0001-6205-8628
dc.contributor.orcid0000-0002-9008-9437
dc.contributor.orcid0000-0002-6305-4343
dc.date.accessioned2025-11-13T11:35:28Z
dc.date.issued2016-08-09
dc.identifier.doihttps://doi.org/10.1016/j.tsf.2016.08.011
dc.identifier.endpage144
dc.identifier.issn0040-6090
dc.identifier.openalexW2517996878
dc.identifier.startpage141
dc.identifier.urihttps://hdl.handle.net/11421/7302
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2016.08.011
dc.identifier.volume616
dc.language.isoen
dc.relation.ispartofThin Solid Films
dc.rightsrestrictedAccess
dc.subjectMolecular beam epitaxy
dc.subjectDark current
dc.subjectPhotodetector
dc.subjectOptoelectronics
dc.subjectMaterials science
dc.subjectSubstrate (aquarium)
dc.subjectWavelength
dc.subjectQuantum efficiency
dc.subjectInfrared
dc.subjectArrhenius plot
dc.subjectOptics
dc.subjectEpitaxy
dc.subjectChemistry
dc.subjectLayer (electronics)
dc.subjectActivation energy
dc.subjectPhysics
dc.subject.sdg7
dc.titleStructural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5056430509
local.authorid.openalexA5011930276
local.authorid.openalexA5019428469

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