Yayın: Determination of the electronic parameters of nanostructure SnO2/p-Si diode
| dc.contributor.author | Yasemin Çağlar | |
| dc.contributor.author | Çağlar, Yasemin | |
| dc.contributor.author | Müjdat Çağlar | |
| dc.contributor.author | Ilıcan, Saliha | |
| dc.contributor.author | Saliha Ilıcan | |
| dc.contributor.author | Çağlar, Müjdat | |
| dc.contributor.author | F. Yakuphanoğlu | |
| dc.contributor.orcid | 0000-0001-8462-0925 | |
| dc.contributor.orcid | 0000-0001-9724-7664 | |
| dc.contributor.orcid | 0000-0002-6500-7583 | |
| dc.date.accessioned | 2025-11-13T09:57:51Z | |
| dc.date.issued | 2009-02-02 | |
| dc.identifier.doi | 10.1016/j.mee.2009.01.062 | |
| dc.identifier.endpage | 2077 | |
| dc.identifier.issn | 0167-9317 | |
| dc.identifier.issue | 10 | |
| dc.identifier.openalex | W1980552136 | |
| dc.identifier.scopus | 2-s2.0-67649995453 | |
| dc.identifier.startpage | 2072 | |
| dc.identifier.uri | https://hdl.handle.net/11421/2739 | |
| dc.identifier.uri | https://doi.org/10.1016/j.mee.2009.01.062 | |
| dc.identifier.volume | 86 | |
| dc.identifier.wos | 000268552700019 | |
| dc.language.iso | en | |
| dc.relation.ispartof | Microelectronic Engineering | |
| dc.rights | restrictedAccess | |
| dc.subject | Nanostructure | |
| dc.subject | Materials science | |
| dc.subject | Diode | |
| dc.subject | Band gap | |
| dc.subject | Scanning electron microscope | |
| dc.subject | Optoelectronics | |
| dc.subject | Capacitance | |
| dc.subject | Equivalent series resistance | |
| dc.subject | Analytical Chemistry (journal) | |
| dc.subject | Nanotechnology | |
| dc.subject | Voltage | |
| dc.subject | Chemistry | |
| dc.subject | Composite material | |
| dc.subject | Physics | |
| dc.subject.sdg | 7 | |
| dc.title | Determination of the electronic parameters of nanostructure SnO2/p-Si diode | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| local.authorid.openalex | A5030901812 | |
| local.authorid.openalex | A5060958239 | |
| local.authorid.openalex | A5077974474 |
