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Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

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dc.contributor.authorKılıç, A.
dc.contributor.authorErgün, Y.
dc.contributor.authorS. Elagöz
dc.contributor.authorA. Kılıç
dc.contributor.authorY. Ergün
dc.contributor.authorA. Aydınlı
dc.contributor.orcid0000-0001-8144-3951
dc.contributor.orcid0000-0002-9312-6483
dc.contributor.orcid0000-0002-3600-8640
dc.contributor.orcid0000-0003-4567-5207
dc.contributor.orcid0000-0003-1755-1063
dc.date.accessioned2025-11-13T10:15:54Z
dc.date.issued2015-12-29
dc.identifier.doihttps://doi.org/10.1016/j.spmi.2015.12.034
dc.identifier.endpage7
dc.identifier.issn0749-6036
dc.identifier.openalexW2261423112
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/11421/3623
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2015.12.034
dc.identifier.volume91
dc.language.isoen
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsopenAccess
dc.subjectDark current
dc.subjectPhotodetector
dc.subjectMaterials science
dc.subjectOptoelectronics
dc.subjectSuperlattice
dc.subjectDetector
dc.subjectIndium arsenide
dc.subjectGallium antimonide
dc.subjectInfrared
dc.subjectSpecific detectivity
dc.subjectCarrier lifetime
dc.subjectElectron mobility
dc.subjectCurrent (fluid)
dc.subjectSilicon
dc.subjectOptics
dc.subjectGallium arsenide
dc.subjectPhysics
dc.subject.sdg7
dc.titleElectrical performance of InAs/AlSb/GaSb superlattice photodetectors
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5033136705
local.authorid.openalexA5103253376

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