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Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

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dc.contributor.authorŞahin, Seval
dc.contributor.authorAbdullah Demir
dc.contributor.authorSeval Şahin
dc.contributor.authorAtilla Aydınlı
dc.contributor.orcid0000-0001-8867-3370
dc.contributor.orcid0000-0003-4678-0084
dc.contributor.orcid0000-0002-0175-538X
dc.contributor.orcid0000-0001-5952-5993
dc.date.accessioned2025-11-13T10:20:40Z
dc.date.issued2017-12-08
dc.identifier.doihttps://doi.org/10.1088/1361-6641/aaa04d
dc.identifier.endpage025001
dc.identifier.issn0268-1242
dc.identifier.issue2
dc.identifier.openalexW2772407965
dc.identifier.startpage025001
dc.identifier.urihttps://hdl.handle.net/11421/3862
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aaa04d
dc.identifier.volume33
dc.language.isoen
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsrestrictedAccess
dc.subjectDielectric
dc.subjectQuantum well
dc.subjectOptoelectronics
dc.subjectMaterials science
dc.subjectPhotoluminescence
dc.subjectLasing threshold
dc.subjectSemiconductor
dc.subjectBilayer
dc.subjectStress (linguistics)
dc.subjectQuantum efficiency
dc.subjectHigh-κ dielectric
dc.subjectCondensed matter physics
dc.subjectLaser
dc.subjectOptics
dc.subjectChemistry
dc.subjectPhysics
dc.titleConservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5020482951

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