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Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells

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dc.contributor.authorYıldırım, Hasan
dc.contributor.authorAslan, B.
dc.contributor.orcid0000-0002-7436-7759
dc.contributor.orcid0009-0009-7125-7202
dc.date.accessioned2025-11-13T10:46:40Z
dc.date.issued2012-09-01
dc.identifier.doihttps://doi.org/10.1063/1.4751438
dc.identifier.issn0021-8979
dc.identifier.issue5
dc.identifier.openalexW2017344904
dc.identifier.urihttps://hdl.handle.net/11421/5228
dc.identifier.urihttps://doi.org/10.1063/1.4751438
dc.identifier.volume112
dc.language.isoen
dc.relation.ispartofJournal of Applied Physics
dc.rightsrestrictedAccess
dc.subjectWurtzite crystal structure
dc.subjectQuantum well
dc.subjectOscillator strength
dc.subjectCondensed matter physics
dc.subjectDegenerate energy levels
dc.subjectBinding energy
dc.subjectElectric field
dc.subjectEnergy level splitting
dc.subjectQuantum dot
dc.subjectAtom (system on chip)
dc.subjectMagnetic field
dc.subjectElectron
dc.subjectPhysics
dc.subjectAtomic physics
dc.subjectMaterials science
dc.subjectQuantum mechanics
dc.subject.sdg7
dc.titleBinding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5008779264
local.authorid.openalexA5040309765

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