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Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures

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dc.contributor.authorTiraş, E.
dc.contributor.authorArdali, S.
dc.contributor.authorEngin Arslan
dc.contributor.authorE. Özbay
dc.contributor.orcid0000-0003-1711-3637
dc.contributor.orcid0000-0002-0422-7865
dc.contributor.orcid0000-0001-5877-8884
dc.date.accessioned2025-11-13T10:53:43Z
dc.date.issued2012-06-27
dc.identifier.doihttps://doi.org/10.1007/s11664-012-2158-7
dc.identifier.endpage2361
dc.identifier.issn0361-5235
dc.identifier.issue9
dc.identifier.openalexW2140821440
dc.identifier.startpage2350
dc.identifier.urihttps://hdl.handle.net/11421/5584
dc.identifier.urihttps://doi.org/10.1007/s11664-012-2158-7
dc.identifier.volume41
dc.language.isoen
dc.relation.ispartofJournal of Electronic Materials
dc.rightsrestrictedAccess
dc.subjectHeterojunction
dc.subjectElectron
dc.subjectCondensed matter physics
dc.subjectScattering
dc.subjectQuantum well
dc.subjectAtmospheric temperature range
dc.subjectAtomic physics
dc.subjectShubnikov–de Haas effect
dc.subjectMaterials science
dc.subjectRelaxation (psychology)
dc.subjectSemiconductor
dc.subjectSolid-state physics
dc.subjectElectric field
dc.subjectPhonon
dc.subjectFermi gas
dc.subjectPhysics
dc.subjectQuantum oscillations
dc.subjectOptoelectronics
dc.subjectOptics
dc.subject.sdg7
dc.titleEnergy Relaxation Rates in AlInN/AlN/GaN Heterostructures
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5076533541
local.authorid.openalexA5008892502

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