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Intersubband transitions in In<i>x</i>Ga1−<i>x</i>N/In<i>y</i>Ga1−<i>y</i>N/GaN staggered quantum wells

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dc.contributor.authorAslan, B.
dc.contributor.authorB. Aslan
dc.contributor.orcid0000-0002-7436-7759
dc.contributor.orcid0009-0009-7125-7202
dc.date.accessioned2025-11-13T11:34:22Z
dc.date.issued2014-04-23
dc.identifier.doihttps://doi.org/10.1063/1.4872251
dc.identifier.issn0021-8979
dc.identifier.issue16
dc.identifier.openalexW1970690996
dc.identifier.urihttps://hdl.handle.net/11421/7240
dc.identifier.urihttps://doi.org/10.1063/1.4872251
dc.identifier.volume115
dc.language.isoen
dc.relation.ispartofJournal of Applied Physics
dc.rightsrestrictedAccess
dc.subjectQuantum well
dc.subjectOscillator strength
dc.subjectAbsorption (acoustics)
dc.subjectCondensed matter physics
dc.subjectDoping
dc.subjectElectric field
dc.subjectPhysics
dc.subjectChemistry
dc.subjectPoisson's equation
dc.subjectAtomic physics
dc.subjectQuantum mechanics
dc.subjectOptics
dc.subjectLaser
dc.subjectSpectral line
dc.subject.sdg7
dc.titleIntersubband transitions in In<i>x</i>Ga1−<i>x</i>N/In<i>y</i>Ga1−<i>y</i>N/GaN staggered quantum wells
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5040309765

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