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Phonon frequency variations in high quality InAs1−xSbx epilayers grown on GaAs

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dc.contributor.authorErkuş, Mehmet
dc.contributor.authorSerincan, U.
dc.contributor.orcid0000-0001-6205-8628
dc.contributor.orcid0000-0002-6305-4343
dc.date.accessioned2025-11-13T11:45:18Z
dc.date.issued2013-12-16
dc.identifier.doihttps://doi.org/10.1016/j.apsusc.2013.12.046
dc.identifier.endpage31
dc.identifier.issn0169-4332
dc.identifier.openalexW2017589813
dc.identifier.startpage28
dc.identifier.urihttps://hdl.handle.net/11421/7850
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2013.12.046
dc.identifier.volume318
dc.language.isoen
dc.relation.ispartofApplied Surface Science
dc.rightsrestrictedAccess
dc.subjectPhonon
dc.subjectRaman spectroscopy
dc.subjectDiffraction
dc.subjectMaterials science
dc.subjectMolecular beam epitaxy
dc.subjectTransverse plane
dc.subjectFull width at half maximum
dc.subjectCondensed matter physics
dc.subjectBlueshift
dc.subjectLattice (music)
dc.subjectOptics
dc.subjectEpitaxy
dc.subjectOptoelectronics
dc.subjectPhysics
dc.subjectPhotoluminescence
dc.subjectNanotechnology
dc.titlePhonon frequency variations in high quality InAs1−xSbx epilayers grown on GaAs
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5056430509
local.authorid.openalexA5019428469

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