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Electrical characterization of nanocluster n-CdO/p-Si heterojunction diode

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dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorIlıcan, Saliha
dc.contributor.authorSaliha Ilıcan
dc.contributor.orcid0000-0002-6500-7583
dc.contributor.orcid0000-0001-9724-7664
dc.contributor.orcid0000-0001-8462-0925
dc.date.accessioned2025-11-13T09:16:41Z
dc.date.issued2010-07-09
dc.identifier.doihttps://doi.org/10.1016/j.jallcom.2010.06.174
dc.identifier.endpage193
dc.identifier.issn0925-8388
dc.identifier.issue1
dc.identifier.openalexW1976146517
dc.identifier.startpage188
dc.identifier.urihttps://hdl.handle.net/11421/985
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2010.06.174
dc.identifier.volume506
dc.language.isoen
dc.relation.ispartofJournal of Alloys and Compounds
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectHeterojunction
dc.subjectDiode
dc.subjectSemiconductor
dc.subjectOptoelectronics
dc.subjectEquivalent series resistance
dc.subjectBand gap
dc.subjectCrystallite
dc.subjectSchottky diode
dc.subjectVoltage
dc.subjectElectrical engineering
dc.subject.sdg7
dc.titleElectrical characterization of nanocluster n-CdO/p-Si heterojunction diode
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5030901812
local.authorid.openalexA5077974474
local.authorid.openalexA5060958239

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