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Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

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dc.contributor.authorArpapay, Burcu
dc.contributor.authorŞahin, Seval
dc.contributor.authorArıkan, B.
dc.contributor.authorSerincan, U.
dc.contributor.orcid0000-0002-0784-560X
dc.contributor.orcid0000-0002-0175-538X
dc.contributor.orcid0000-0002-6305-4343
dc.date.accessioned2025-11-13T11:53:01Z
dc.date.issued2014-05-24
dc.identifier.doihttps://doi.org/10.1016/j.tsf.2014.05.034
dc.identifier.endpage114
dc.identifier.issn0040-6090
dc.identifier.openalexW2039972439
dc.identifier.startpage110
dc.identifier.urihttps://hdl.handle.net/11421/8261
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2014.05.034
dc.identifier.volume564
dc.language.isoen
dc.relation.ispartofThin Solid Films
dc.rightsrestrictedAccess
dc.subjectMolecular beam epitaxy
dc.subjectCondensation
dc.subjectMaterials science
dc.subjectEpitaxy
dc.subjectOptoelectronics
dc.subjectOptics
dc.subjectNanotechnology
dc.subjectPhysics
dc.subjectThermodynamics
dc.subjectLayer (electronics)
dc.titleRedundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5002634993
local.authorid.openalexA5020482951
local.authorid.openalexA5055025924
local.authorid.openalexA5019428469

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