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Band Gap Energies of CdO:F Semiconductor Films Produced by Ultrasonic Spray Pyrolysis Method

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dc.contributor.authorIrmak, Sinan
dc.contributor.authorKul, Metin
dc.date.accessioned2025-11-13T21:26:44Z
dc.date.issued2007-01-01
dc.identifier.doihttps://doi.org/10.1063/1.2733349
dc.identifier.endpage608
dc.identifier.issn0094-243X
dc.identifier.openalexW1608517715
dc.identifier.startpage608
dc.identifier.urihttps://hdl.handle.net/11421/13450
dc.identifier.urihttps://doi.org/10.1063/1.2733349
dc.identifier.volume899
dc.language.isoen
dc.relation.ispartofAIP conference proceedings
dc.rightsrestrictedAccess
dc.subjectMaterials science
dc.subjectCadmium oxide
dc.subjectBand gap
dc.subjectDoping
dc.subjectAbsorption edge
dc.subjectFluorine
dc.subjectSemiconductor
dc.subjectAbsorption (acoustics)
dc.subjectBlueshift
dc.subjectOptoelectronics
dc.subjectDirect and indirect band gaps
dc.subjectAnalytical Chemistry (journal)
dc.subjectCadmium
dc.subjectComposite material
dc.subjectPhotoluminescence
dc.subjectMetallurgy
dc.subjectChemistry
dc.titleBand Gap Energies of CdO:F Semiconductor Films Produced by Ultrasonic Spray Pyrolysis Method
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5057774441
local.authorid.openalexA5012275171

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