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Magnesium-doped zinc oxide nanorod–nanotube semiconductor/p-silicon heterojunction diodes

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dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorIlıcan, Saliha
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorMüjdat Çağlar
dc.contributor.authorF. Yakuphanoğlu
dc.contributor.orcid0000-0001-8462-0925
dc.contributor.orcid0000-0003-0407-3787
dc.contributor.orcid0000-0001-9724-7664
dc.contributor.orcid0000-0002-6500-7583
dc.date.accessioned2025-11-13T10:36:20Z
dc.date.issued2016-07-12
dc.identifier.doihttps://doi.org/10.1007/s00339-016-0251-0
dc.identifier.issn0947-8396
dc.identifier.issue8
dc.identifier.openalexW2468013491
dc.identifier.urihttps://hdl.handle.net/11421/4684
dc.identifier.urihttps://doi.org/10.1007/s00339-016-0251-0
dc.identifier.volume122
dc.language.isoen
dc.relation.ispartofApplied Physics A
dc.rightsrestrictedAccess
dc.subjectNanorod
dc.subjectMaterials science
dc.subjectHeterojunction
dc.subjectDoping
dc.subjectOptoelectronics
dc.subjectDiode
dc.subjectBand gap
dc.subjectSemiconductor
dc.subjectZinc
dc.subjectChemical bath deposition
dc.subjectNanotechnology
dc.subject.sdg7
dc.titleMagnesium-doped zinc oxide nanorod–nanotube semiconductor/p-silicon heterojunction diodes
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5030901812
local.authorid.openalexA5060958239
local.authorid.openalexA5077974474

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