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Superconductivity in heavily compensated Mg-doped InN

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dc.contributor.authorTiraş, E.
dc.contributor.authorM. Güneş
dc.contributor.authorN. Balkan
dc.contributor.authorR. Airey
dc.contributor.authorW. J. Schaff
dc.contributor.orcid0000-0003-1711-3637
dc.contributor.orcid0000-0002-7974-0540
dc.contributor.orcid0000-0002-6141-9484
dc.date.accessioned2025-11-13T10:42:09Z
dc.date.issued2009-04-06
dc.identifier.doihttps://doi.org/10.1063/1.3116120
dc.identifier.issn0003-6951
dc.identifier.issue14
dc.identifier.openalexW2030907364
dc.identifier.urihttps://hdl.handle.net/11421/4997
dc.identifier.urihttps://doi.org/10.1063/1.3116120
dc.identifier.volume94
dc.language.isoen
dc.relation.ispartofApplied Physics Letters
dc.rightsopenAccess
dc.subjectCondensed matter physics
dc.subjectSuperconductivity
dc.subjectMaterials science
dc.subjectMolecular beam epitaxy
dc.subjectIndium
dc.subjectMagnetoresistance
dc.subjectDoping
dc.subjectHall effect
dc.subjectElectrical resistivity and conductivity
dc.subjectTransition temperature
dc.subjectJosephson effect
dc.subjectEpitaxy
dc.subjectMagnetic field
dc.subjectNanotechnology
dc.subjectPhysics
dc.subjectOptoelectronics
dc.titleSuperconductivity in heavily compensated Mg-doped InN
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5076533541

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