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Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping

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dc.contributor.authorKorkmaz, Melih
dc.contributor.authorSerincan, U.
dc.contributor.authorArıkan, Bülent
dc.contributor.authorAslan, B.
dc.contributor.authorB. Aslan
dc.contributor.orcid0000-0002-9051-4464
dc.contributor.orcid0000-0002-3336-0841
dc.contributor.orcid0000-0002-6305-4343
dc.contributor.orcid0009-0009-7125-7202
dc.date.accessioned2025-11-13T12:15:45Z
dc.date.issued2015-06-30
dc.identifier.doihttps://doi.org/10.1088/0268-1242/30/8/085006
dc.identifier.endpage085006
dc.identifier.issn0268-1242
dc.identifier.issue8
dc.identifier.openalexW1940966671
dc.identifier.startpage085006
dc.identifier.urihttps://hdl.handle.net/11421/9476
dc.identifier.urihttps://doi.org/10.1088/0268-1242/30/8/085006
dc.identifier.volume30
dc.language.isoen
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsopenAccess
dc.subjectResponsivity
dc.subjectSubstrate (aquarium)
dc.subjectSuperlattice
dc.subjectMolecular beam epitaxy
dc.subjectDoping
dc.subjectMaterials science
dc.subjectOptoelectronics
dc.subjectHall effect
dc.subjectInfrared
dc.subjectPhotodetector
dc.subjectEpitaxy
dc.subjectAnalytical Chemistry (journal)
dc.subjectElectrical resistivity and conductivity
dc.subjectChemistry
dc.subjectOptics
dc.subjectNanotechnology
dc.subjectPhysics
dc.subjectLayer (electronics)
dc.subject.sdg7
dc.titleComparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5015727526
local.authorid.openalexA5019428469
local.authorid.openalexA5110542078
local.authorid.openalexA5040309765

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