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Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

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dc.contributor.authorIlıcan, Saliha
dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorYasemin Çağlar
dc.contributor.authorMüjdat Çağlar
dc.contributor.orcid0000-0003-0407-3787
dc.contributor.orcid0000-0001-8462-0925
dc.contributor.orcid0000-0001-9724-7664
dc.date.accessioned2025-11-13T09:37:41Z
dc.date.issued2017-12-05
dc.identifier.doihttps://doi.org/10.1016/j.molstruc.2017.11.121
dc.identifier.endpage683
dc.identifier.issn0022-2860
dc.identifier.openalexW2774400989
dc.identifier.startpage675
dc.identifier.urihttps://hdl.handle.net/11421/1696
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2017.11.121
dc.identifier.volume1156
dc.language.isoen
dc.relation.ispartofJournal of Molecular Structure
dc.rightsrestrictedAccess
dc.subjectEquivalent series resistance
dc.subjectDiode
dc.subjectHeterojunction
dc.subjectChemistry
dc.subjectOptoelectronics
dc.subjectDoping
dc.subjectAnalytical Chemistry (journal)
dc.subjectSchottky diode
dc.subjectScanning electron microscope
dc.subjectRectification
dc.subjectMaterials science
dc.subjectVoltage
dc.subjectElectrical engineering
dc.titleFabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters
dc.typeArticle
dspace.entity.typePublication
local.authorid.openalexA5060958239
local.authorid.openalexA5030901812
local.authorid.openalexA5077974474

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